SEMICONDUCTOR TECHNICAL DATA
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by MRF421/D
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a high–power linear amplifier from 2.0 to
30 MHz.
•
Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
•
Intermodulation Distortion @ 100 W (PEP) —
IMD = –30 dB (Min)
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
—
P
D
T
stg
Value
20
45
3.0
20
30
290
1.66
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 50 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage (I
C
= 200 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage (I
C
= 200 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 16 Vdc, V
BE
= 0, T
C
= 25°C)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
20
45
45
3.0
—
—
—
—
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
Vdc
mAdc
(continued)
REV 1
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
