SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF426/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 25 W (PEP)
Minimum Gain = 22 dB
Efficiency = 35%
•
Intermodulation Distortion @ 25 W (PEP) —
IMD = –30 dB (Max)
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Class A and AB Characterization
•
BLX 13 Equivalent
MRF426
25 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 5 s
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
—
P
D
T
stg
Value
35
65
4.0
3.0
6.0
70
0.4
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 50 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage (I
C
= 50 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 28 Vdc, V
BE
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
35
65
4.0
—
—
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
mAdc
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
