MRF426
The RF Line NPN Silicon Power Transistor
25W(PEP), 30MHz, 28V
Designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
M/A-COM Products
Released - Rev. 05202009
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Specified 28 V, 30 MHz characteristics —
Output power = 25 W (PEP)
Minimum gain = 22 dB
Efficiency = 35%
Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
100% tested for load mismatch at all phase angles with 30:1 VSWR
Class A and AB characterization
BLX 13 equivalent
CASE 211–07, STYLE 1
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
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Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
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Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.