MRF587
The RF Line NPN Silicon High Frequency Transistor
Noise Figure 3.0 dB@ 500MHz
Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-
band amplifiers. Ideal for use in CATV, MATV, and instrumentation
applications.
M/A-COM Products
Released - Rev. 07.07
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Low noise figure —
NF = 3.0 dB (typ.) @ f = 500 MHz, I
C
= 90 mA
High power gain —
G
U(max)
= 16.5 dB (typ.) @ f = 500 MHz
Ion implanted
All gold metal system
High f
T
— 5.5 GHz
Low intermodulation distortion:
TB
3
= –70 dB
DIN = 125 dB
μV
Nichrome emitter ballast resistors
CASE 244A–01, STYLE 1
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
