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PH1214-80M 参数 Datasheet PDF下载

PH1214-80M图片预览
型号: PH1214-80M
PDF下载: 下载PDF文件 查看货源
内容描述: 雷达脉冲功率晶体管 - 80瓦, 1.20-1.40千兆赫, 150毫秒脉冲, 10 %占空比 [Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150ms Pulse, 10% Duty]
分类和应用: 晶体晶体管脉冲雷达放大器局域网
文件页数/大小: 2 页 / 56 K
品牌: MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
 浏览型号PH1214-80M的Datasheet PDF文件第2页  
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-80M
PH1214-80M
Radar Pulsed Power Transistor - 80 Watts,
1.20-1.40 GHz, 150µs Pulse, 10% Duty
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM’s PH1214-80M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-80M can produce 80 watts of output
power with medium pulse length (150 µS) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Dissued emitter ballast resistors
and gold metalization assure ruggedness and long-term reliabil-
ity. In addition to L-band pulsed radars, this high performance
power transistor can also be used in pulsed digital communica-
tions systems.
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
1.20
1.30
1.40
TEST FIXTURE
INPUT
CIRCUIT
Z
IF
(Ω)
9.4 - j4.5
8.3 - j2.8
7.9 - j1.3
Z
OF
(Ω)
7.0 - j2.8
4.5 - j3.2
3.0 - j2.1
TEST FIXTURE
OUTPUT
CIRCUIT
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
stg
T
j
Rating
70
3.0
6.4
185
-65 to +200
200
Units
V
V
A
W
°C
°C
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol
BV
CES
I
CES
R
TH(JC)
P
O
G
P
η
R
L
VSWR-T
VSWR-S
Parameter
Collector-Emitter Breakdown
Collector-Emitter Breakdown
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Test Conditions
I
C
= 35 mA
V
CE
= 40 V
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 13 W, f = 1.2, 1.3, 1.4 GHz
Min
70
-
-
80
7.5
50
9
-
-
Max
-
3.5
0.80
-
-
-
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
V2.00
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.