Matched GaAs SPDT Switch, DC - 3
GHz with TTL/CMOS Control Input
V 3.00
SW-313
Features
n
Integral TTL Driver
n
Low DC Power Consumption
n
Fast Switching Speed: 7 ns Typical
n
Surface Mount Package
n
50 Ohm Nominal Impedance
n
MIL-STD-883 Screening Available
CR-9
Description
M/A-COM’s SW-313 is a GaAs FET SPDT absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The SW-313 is
ideally suited for use where fast speed, low power
consumption and broadband applications are required.
MIL-STD-883 screening available.
Electrical Specifications
1,2
(From –55°C to +85°C)
Parameter
Insertion Loss
Test Conditions
—
Frequency
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
—
—
—
0.05 GHz
0.5 GHz to 3 GHz
0.05 GHz
0.5 GHz to 3 GHz
0.05 GHz
0.5 GHz to 3 GHz
—
—
Units
dB
dB
dB
dB
Ratio
Ratio
Ratio
Ratio
dB
dB
dB
dB
ns
ns
mV
dBm
dBm
dBm
dBm
dBm
dBm
µA
µA
Min
—
—
—
—
—
—
—
—
35
45
50
55
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
7
18
25
+25
+30
+60
+65
+40
+46
—
—
Max
1.2
1.1
0.9
0.8
1.4:1
1.35:1
1.35:1
1.3:1
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
VSWR
—
Isolation
—
Trise, Tfall
Ton, Toff
Transients
1 dB Compression
IP2
IP3
Vin Low
Vin High
10% to 90%
1.3V CTL to 90% / 10%
In-Band
Input Power
Two-Tone Input Power up to +5 dBm
Two-Tone Input Power up to +5 dBm
0V to 0.8V
2.0V to 5.0V
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
