TL(BE,GTE,EGE)1100B(T11)
Electrical Characteristics (Ta = 25°C)
Reverse Current
Forward Voltage V
F
I
Product Name
R
Min
2.8
3.0
2.9
Typ.
3.2
3.3
3.4
V
Max
4.3
4.5
4.4
I
Max
10
V
R
F
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
20
4
mA
µA
V
Optical Characteristics–1 (Ta = 25°C)
Luminous Intensity I
Available Iv rank
V
Product Name
Please see Note 2
Min
63
Typ.
100
300
350
mcd
Max
320
800
800
mcd
I
F
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
20
20
QA / RA / SA
SA / TA / UA
160
100
mcd
20
RA / SA / TA / UA
mA
Note 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility.
Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.
Iv rank
Rank symbol
Min
63
Max
125
200
320
500
800
mcd
QA
RA
SA
TA
100
160
250
400
mcd
UA
Unit
Optical Characteristics–2 (Ta = 25°C)
Emission Spectrum
Peak Emission
Product Name
∆λ
Dominant Wavelength λ
d
Wavelength λ
p
I
F
Min
Typ.
Max
Typ.
Min
Typ.
Max
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
⎯
⎯
⎯
468
496
523
nm
⎯
⎯
⎯
25
30
35
nm
463
496
518
470
505
528
nm
477
514
537
20
mA
Note 3: Caution
ESD withstand voltage according to MIL STD 883D, Method 3015.7 : ≥1000V
When handling this LED, take the following measures to prevent the LED from being damaged or otherwise
adversely affected.
1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor.
2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap is
good for this purpose.
3) Ground all tools including soldering irons.
2
2006-06-01