DA9275.007
19 February 2004
PIN DESCRIPTION
Pin Description
Crystal/Varactor Oscillator Input
Voltage Control Input
Power Supply Ground
Buffer Output
Power Supply Voltage
Tri State
Crystal Oscillator Output
Symbol
X1
VC
VSS
OUT
VDD
PD
X2
x-coordinate
209
425
600
1029
841
379
197
y-coordinate
161
165
175
1030
1016
1028
1030
Note
Note:
Because the substrate of the die is internally connected to GND, the die has to be connected to GND or
left floating. Please make sure that GND is the first pad to be bonded. Pick-and-place and all component
assembly are recommended to be performed in ESD protected area.
Note:
Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The
coordinates may vary depending on sawing width and location, however, distances between pads are accurate.
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input Pin Voltage
Power Dissipation
Storage Temperature
ESD Rating
Symbol
V
DD
-
V
SS
P
MAX
T
ST
HBM
Conditions
Min
-0.3
V
SS
-0.3
-55
Max
6.0
V
DD
+ 0.3
100
120
2
Unit
V
V
mW
o
C
kV
Note
RECOMMENDED OPERATION CONDITIONS
Parameter
Supply Voltage
Supply Current
Operating Temperature
Voltage Control Line
Impedance
Crystal Pulling Sensitivity
Crystal Load Capacitance
Symbol
V
DD
I
DD
T
OP
Vc
IMP
S
C
L
Conditions
VDD = 2.8 V
-40
MAS9275A,
MAS9275B
V
C
= 1.65 V
MAS9275A1
MAS9275B2
MAS9275B3
MAS9275C2
MAS9275C3
MAS9275C4
1
30
8
10
10.5
10
10.5
10.5
Min
2.5
Typ
2.8
2.3
Max
5.5
+85
Unit
V
mA
o
C
MΩ
ppm/pF
pF
2)
2)
2)
Note
1)
Note 1:
It is recommend to connect a 1 nF capacitor to the VDD pin (either in a module or in an end
application).
Note 2:
Crystal Load Capacitance is typically 8.2 pF, when V
C
= 2.5 V.
2 (10)
MAS [ MICRO ANALOG SYSTEMS ]
