II. Manufacturing Information
A. Description/Function:
B. Process:
C. Number of Device Transistors:
D. Fabrication Location:
E. Assembly Location:
F. Date of Initial Production:
Quick-PWM Slave Controllers for Multiphase, Step-Down Supplies
S12 – Silicon Gate 1.2 micron CMOS
1422
Oregon or California, USA
Malaysia, Thailand or Philippines
October, 2001
III. Packaging Information
A. Package Type:
B. Lead Frame:
C. Lead Finish:
D. Die Attach:
E. Bondwire:
F. Mold Material:
G. Bonding Diagram
H. Flammability Rating:
16-Lead QSOP
Copper
Solder Plate
Silver-filled epoxy
Gold (1.3 mil dia.)
Epoxy with silica filler
05-3801-0006
Class UL94-V0
I. Classification of Moisture Sensitivity per JEDEC standard JESD22-A112: Level 1
IV. Die Information
A. Dimensions:
B. Passivation:
C. Interconnect:
D. Backside Metallization:
E. Minimum Metal Width:
F. Minimum Metal Spacing:
G. Bondpad Dimensions:
H. Isolation Dielectric:
I. Die Separation Method:
86 x 91 mils
Si
3
N
4
/SiO
2
(Silicon nitride/ Silicon dioxide)
Aluminum
None
1.2 microns (as drawn)
1.2 microns (as drawn)
5 mil. Sq.
SiO
2
Wafer Saw
MAXIM [ MAXIM INTEGRATED PRODUCTS ]
