27C512T
512K (64K x 8-Bit) OTP EPROM
A5-A9
1024 x 1022
Memory Matrix
x-Decoder
A12-A16
I/O0
Input
Data
Control
Y- Gating
Y - Decoder
I/O15
CE
OE
PGM
A0-A4
A10-A11
V
CC
V
PP
V
SS
H
H
: High Threshhold Inverter
Memory
Logic Diagram
F
EATURES
:
• 64K x 8-bit OTP EPROM organization
• R
AD
-P
AK
® radiation-hardened against natural space
radiation
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
-SEL
TH
> 80 MeV/mg/cm2
-SEU
TH
> 80 Mev/mg/cm2
• Package:
-32 pin R
AD
-P
AK
® flat pack
-32 pin R
AD
-P
AK
® DIP
• Fast access time:
- 120, 150, 200 ns (max)
• Low power dissipation:
- Active mode: 100 mW/MHz (typ)
- Standby mode: 10 µ W (typ)
• Programming power supply:
- V
PP
= 12.5 V + 0.3 V
• One-time programmable
• Pin arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies’ 27C512T high density 512-Kilobit one-
time programmable electrically programmable read only mem-
ory microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. The 27C512T
features fast address times and low power dissipation. The
27C512T offers high speed programming using page pro-
gramming mode.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
06.24.03 Rev 4
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
