1 Megabit (128K x 8-Bit) EEPROM
28C010T
F
IGURE
7. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(1) (E
NABLE
S/W P
ROTECTION
)
F
IGURE
8. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(2) (D
ISABLE
S/W P
ROTECTION
)
Memory
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30µ s. In case CE and WE are kept high for 100 µ s after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
06.03.03 REV 14
All data sheets are subject to change without notice
12
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
