1 Megabit (128K x 8-Bit) EEPROM
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Output Enable Access Time
CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay
3
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
S
YMBOL
t
OE
S
UBGROUPS
9, 10, 11
0
0
0
t
OH
9, 10, 11
0
0
0
9, 10, 11
t
DF
0
0
0
t
DFR
0
0
0
9, 10, 11
--
--
--
M
IN
28C011T
M
AX
U
NITS
ns
75
75
100
ns
--
--
--
ns
50
50
60
T
ABLE
7. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
Memory
300
350
450
ns
400
450
650
t
RR
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
8. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
-120
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
0
t
CS
9, 10, 11
0
0
0
--
--
--
ns
--
--
--
M
IN 1
M
AX
U
NITS
ns
11.10.03 REV 10
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
