1 Megabit (128K x 8-Bit) EEPROM
28C011T
T
ABLE
8. 28C011T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Write Cycle Time
2
-120
-150
-200
Data Latch Time
-120
-150
-200
Byte Load Window
-120
-150
-200
Byte Load Cycle
-120
-150
-200
Time to Device Busy
-120
-150
-200
Write Start Time
3
-120
-150
-200
RES to Write Setup Time
-120
-150
-200
V
CC
to RES Setup Time
4
-120
-150
-200
1. Use this device in a longer cycle than this value.
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4.
Gauranteed by design.
S
YMBOL
t
WC
S
UBGROUPS
9, 10, 11
--
--
--
t
DL
9, 10, 11
250
300
400
t
BL
9, 10, 11
100
100
200
t
BLC
9, 10, 11
0.55
0.55
0.95
t
DB
9, 10, 11
100
120
170
t
DW
9, 10, 11
150
150
250
t
RP
9, 10, 11
100
100
200
t
RES
9, 10, 11
1
1
3
--
--
--
--
--
--
µs
--
--
--
µs
--
--
--
ns
30
30
30
ns
--
--
--
µs
--
--
--
µs
10
10
10
ns
M
IN 1
M
AX
U
NITS
ms
Memory
11.10.03 REV 10
All data sheets are subject to change without notice
6
©2003 Maxwell Technologies
All rights reserved.