256K EEPROM (32K x 8-Bit) EEPROM
28C256T
T
ABLE
7. 28C256T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
= 5V ±10%, T
A
= -55
TO
125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-120
-150
CE to Output Delay OE = V
IL
, WE = V
IH
-120
-150
OE to Output Delay CE = V
IL
, WE = V
IH
-120
-150
Output Hold from Address CE = OE = V
IL
, WE = V
IH
-120
-150
OE (CE) High to Output Float CE = V
IL
, WE = V
IH 2
-120
-150
S
UBGROUPS
9, 10, 11
S
YMBOL
t
ACC
--
--
9, 10, 11
t
CE
--
--
9, 10, 11
t
OE
0
0
9, 10, 11
t
OH
0
0
9, 10, 11
t
DF
0
0
50
50
--
--
ns
75
75
ns
120
150
ns
120
150
ns
M
IN
M
AX
U
NITS
ns
Memory
1.
Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); ref-
erence levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
T
ABLE
8. 28C256T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
W
RITE
O
PERATIONS
(V
CC
= 5V ±10%, T
A
= -55
TO
125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Setup Time
-120
-150
CE to Write Setup Time
-120
-150
WE to Write Setup Time
-120
-150
WE Hold Time
-120
-150
S
UBGROUPS
S
YMBOL
t
AS
M
IN1
0
0
t
CS 2
T
YP
--
--
M
AX
--
--
ns
0
0
t
WS 3
--
--
--
--
ns
0
0
t
WH 3
0
0
--
--
--
--
--
--
ns
U
NITS
ns
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
02.18.02 Rev5
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
