256K EEPROM (32K x 8-Bit)
28C256T
28C256T
Logic Diagram
Memory
F
EATURES
:
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
• Excellent Single Event Effects @ 25C:
- SEL
TH
LET: (Device)> 120MeV cm
2/
mg
- SEU
TH
LET (Memory Cells): > 90 MeV cm
2/
mg
- SEU
TH
LET (Write mode): > 18 MeV cm
2/
mg
- SEU
TH
LET (Read mode): > 40 MeV cm
2/
mg
• Package:
- 28 pin R
AD
-P
AK
® flat pack
- 28 pin R
AD
-P
AK
® DIP
- JEDEC approved byte wide pinout
• High Speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page Write Mode:
- 1 to 64 bytes
• Low power dissipation:
- 15mA active current (cycle = 1 µs)
- 20µA standby current (CE = V
CC
)
D
ESCRIPTION
:
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page pro-
grammability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and program-
ming operations.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwells’ Class S.
03.20.15 Rev 6
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2015 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
