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28LV010RT1FB20 参数 Datasheet PDF下载

28LV010RT1FB20图片预览
型号: 28LV010RT1FB20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 1兆位( 128K ×8位) EEPROM [3.3V 1 Megabit (128K x 8-Bit) EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 364 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
7. 28LV010 AC C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
= 3.3V ± 10%, T
A
= -55
TO
+125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Address Access Time
-200
-250
Chip Enable Access Time
-200
-250
Output Enable Access Time
-200
-250
T
EST
C
ONDITIONS
CE = OE = V
IL
, WE = V
IH
t
CE
OE = V
IL
, WE = V
IH
t
OE
CE = V
IL
, WE = V
IH
t
OH
9, 10, 11
0
0
t
DF
CE = V
IL
, WE = V
IH
t
DFR
CE =OE= V
IL
, WE = V
IH
t
RR
CE = OE = V
IL
WE = V
IH
9, 10, 11
0
0
9, 10, 11
0
0
9, 10, 11
0
0
9, 10, 11
0
0
9, 10, 11
--
--
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
M
IN
28LV010
M
AX
200
250
U
NIT
ns
ns
200
250
ns
110
120
ns
--
--
ns
50
50
ns
300
350
ns
525
600
Output Hold to Address Change
-200
CE = OE = V
IL
, WE = V
IH
-250
Output Disable to High-Z
2
-200
-250
Output Disable to High-Z
-200
-250
RES to Output Delay
3
-200
-250
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2.
t
DF
and t
DFR
is defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
03.14.03 REV 6
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved.