3.3V 1 Megabit (128K x 8-Bit) EEPROM
F
IGURE
9. T
OGGLE
B
IT
W
AVEFORM
28LV010
Memory
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30 µ s. In case CE and WE are kept high for 100(s after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V
OL
after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
03.14.03 REV 6
All data sheets are subject to change without notice
13
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
