3.3V 1 Megabit (128K x 8-Bit) EEPROM
(V
CC
= 3.3V ± 10%, T
A
= -55
TO
+125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Byte Load Cycle
-200
-250
Data Latch Time
2
-200
-250
Byte Load Window
2
-200
-250
Time to Device Busy
-200
-250
Write Start Time
-200
-250
RES to Write Setup Time
2
-200
-250
V
CC
to RES Setup Time
2
-200
-250
S
YMBOL
t
BLC
S
UBGROUPS
9, 10, 11
1
1
t
DL
9, 10, 11
700
750
t
BL
9, 10, 11
100
100
t
DB
9, 10, 11
100
120
t
DW
9, 10, 11
150
250
t
RP
9, 10, 11
100
100
t
RES
9, 10, 11
1
1
M
IN
28LV010
M
AX
30
30
ns
-
-
µs
--
--
ns
--
--
ns
--
--
µs
--
--
µs
--
--
U
NIT
µs
T
ABLE
8. 28LV010 AC E
LECTRICAL
C
HARACTERISTICS FOR
E
RASE AND
W
RITE
O
PERATIONS
Memory
1. t
WC
must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
internal write operation within this value.
2. Guaranteed by design.
T
ABLE
9. 28LV010 M
ODE
S
ELECTION1,2
M
ODE
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
Program
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
03.14.03 REV 6
CE
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES
V
H
X
V
H
V
H
X
X
V
H
V
IL
RDY/BUSY
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out (I/O7)
High-Z
All data sheets are subject to change without notice
6
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
