4 Megabit (512K x 8-Bit) CMOS SRAM
T
ABLE
7. 33C408 AC C
HARACTERISTICS FOR
R
EAD
C
YCLE
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Chip Select to Power Up Time
-20
-25
-30
Chip Select to Power Down Time
-20
-25
-30
S
YMBOL
t
PU
S
UBGROUPS
9, 10, 11
--
--
--
t
PD
9, 10, 11
--
--
--
10
15
20
0
0
0
M
IN
T
YP
33C408
M
AX
--
--
--
ns
--
--
--
U
NIT
ns
T
ABLE
8. 33C408 F
UNCTIONAL
D
ESCRIPTION
CS
H
L
L
L
1. X = don’t care.
WE
X
1
H
H
L
OE
X
1
H
L
X
1
M
ODE
Not Select
Output Disable
Read
Write
I/O P
IN
High-Z
High-Z
D
OUT
D
IN
S
UPPLY
C
URRENT
I
SB
, I
SB1
I
CC
I
CC
I
CC
Subgroups
T
ABLE
9. 33C408 AC C
HARACTERISTICS FOR
W
RITE
C
YCLE
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Write Cycle Time
-20
-25
-30
Chip Select to End of Write
-20
-25
-30
Address Setup Time
-20
-25
-30
Address Valid to End of Write
-20
-25
-30
S
UBGROUPS
9, 10, 11
S
YMBOL
t
WC
20
25
30
9, 10, 11
t
CW
14
15
17
9, 10, 11
t
AS
0
0
0
9, 10, 11
t
AW
14
15
17
--
--
--
--
--
--
--
--
--
--
--
--
ns
--
--
--
--
--
--
ns
--
--
--
--
--
--
ns
M
IN
T
YP
M
AX
U
NIT
ns
04.16.02 REV 8
All data sheets are subject to change without notice
5
©2002 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
