4 Megabit (512K x 8-Bit) CMOS SRAM
T
ABLE
4. 33LV408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Supply Voltage
Ground
Input High Voltage
1
Input Low Voltage
2
Thermal Impedance
Weight
1. V
IH
(max) = V
CC
+2.0V ac (pulse width < 10 ns) for I < 20 mA
2.
V
IL
(min) = -2.0V ac(pulse width < 10 ns) for I < 20 mA
S
YMBOL
V
CC
V
SS
V
IH
V
IL
M
IN
3.0
0
2.2
-0.3
--
33LV408
M
AX
3.6
0
V
CC
+0.3
0.8
1.21
12
U
NIT
V
V
V
V
°C/W
Grams
Θ
JC
T
ABLE
5. 33LV408 C
APACITANCE
(f = 1.0 MH
Z
, V
CC
= 3.3 V, T
A
= 25
°
C)
P
ARAMETER
Input Capacitance
1
CS1 - CS4,
OE, WE
I/O0-7, I/O8-15, I/O16-23, I/O24-31
Input / Output Capacitance
1
1. Guaranteed by design.
S
YMBOL
C
IN
T
EST
C
ONDITIONS
V
IN
= 0 V
7
28
7
C
OUT
V
I/O
= 0 V
8
pF
M
AX
U
NITS
pF
Memory
T
ABLE
6. 33LV408 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Current
-20
-25
-30
Standby Power Supply
Current
S
YMBOL
C
ONDITION
I
LI
I
LO
V
OL
V
OH
I
CC
V
IN
= V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
,
V
OUT
=V
SS
to V
CC
I
OL
= 8mA
I
OH
= -4mA
Min cycle, 100% Duty, CS=V
IL
, I
OUT
=0mA,
V
IN
= V
IH
or V
IL
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
--
--
--
1, 2, 3
--
150
140
130
60
mA
M
IN
-2
-2
--
2.4
M
AX
2
2
0.4
--
U
NIT
µA
µA
V
V
mA
I
SB
CS = V
IH
, Min Cycle
04.02.04 REV 2
All data sheets are subject to change without notice
3
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
