48SD1616
256 Mb SDRAM
4-Meg X 16-Bit X 4-Banks
Logic Diagram
(One Amplifier)
Memory
F
EATURES
:
• 256 Megabit ( 4-Meg X 16-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SEL
TH
> 85 MeV/mg/cm
2
@ 25
°
C
D
ESCRIPTION
:
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 256 Mega Bits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time.
Maxwell Technologies’ patented R
AD
-P
AK
®
packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, R
AD
-P
AK
®
provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
01.07.05 REV 4
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JEDEC Standard 3.3V Power Supply
Operating Current: 115 mA
Clock Frequency: 100 MHz Operation
Operating tremperature: -55 to +125
°
C
Auto Refresh
Single pulsed RAS
2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
Programmable CAS latency: 2/3
Power Down and Clock Suspend Modes
LVTTL Compatible Inputs and Outputs
Package: 72-Pin R
AD
-P
AK
®
Flat Package
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
