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5962-3826715VTV 参数 Datasheet PDF下载

5962-3826715VTV图片预览
型号: 5962-3826715VTV
PDF下载: 下载PDF文件 查看货源
内容描述: 微型电路,存储器,数字, CMOS 128K ×8位EEPROM ,单片硅 [MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON]
分类和应用: 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 315 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the  
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available  
onshore at the option of the reviewer.  
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit  
group number 41 (see MIL-PRF-38535, appendix A).  
3.11 Processing of EEPROMs. All testing requirements and quality assurance provisions herein shall be satisfied by the  
manufacturer prior to delivery.  
3.11.1 Conditions of the supplied devices. Devices will be supplied in an unprogrammed or clear state. No provision will be  
made for supplying programmed devices.  
3.11.2 Erasure of EEPROMs. When specified, devices shall be erased in accordance with procedures and characteristics  
specified in 4.5.1.  
3.11.3 Programming of EEPROMs. When specified, devices shall be programmed in accordance with procedures and  
characteristics specified in 4.5.2.  
3.11.4 Verification of state of EEPROMs. When specified, devices shall be verified as either written to the specified pattern  
or cleared. As a minimum, verification shall consist of performing a read of the entire array to verify that all bits are in the proper  
state. Any bit that does not verify to be in the proper state shall constitute a device failure and the device shall be removed from  
the lot or sample.  
3.11.5 Power supply sequence of EEPROMs. In order to reduce the probability of inadvertant writes, the following power  
supply sequences shall be observed.  
a. For device types 1-19, a logic high state shall be applied to WE and/or CE at the same time or before the application  
of V . For device types 16-19, an additional precaution is available, a logic low state shall be applied to RES at the  
CC  
same time or before the application of V  
.
CC  
b. For device types 1-19, a logic high state shall be applied to WE and/or CE at the same time or before the removal of  
V
. For device types 16-19, an additional precaution is available, a logic low state shall be applied to RES at the  
CC  
same time or before the removal of V  
.
CC  
3.12 Endurance. A reprogrammability test shall be completed as part of the vendor's reliability monitors. This  
reprogrammability test shall be done for initial characterization and after any design or process changes which may affect the  
reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of  
program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendor's procedure  
shall be kept under document control and shall be made available upon request of the acquiring or preparing activity, along with  
test data.  
3.13 Data retention. A data retention stress test shall be completed as part of the vendor's reliability monitors. This test shall  
be done for initial characterization and after any design or process change which may affect data retention. The methods and  
procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military  
temperature range. The vendor's procedure shall be kept under document control and shall be made available upon request  
of the acquiring or preparing activity, along with test data.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-38267  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
G
SHEET  
6
DSCC FORM 2234  
APR 97