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5962-3826705MNV 参数 Datasheet PDF下载

5962-3826705MNV图片预览
型号: 5962-3826705MNV
PDF下载: 下载PDF文件 查看货源
内容描述: 微型电路,存储器,数字, CMOS 128K ×8位EEPROM ,单片硅 [MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON]
分类和应用: 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 315 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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3.9 Verification and review for device class M.
For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available
onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
group number 41 (see MIL-PRF-38535, appendix A).
3.11 Processing of EEPROMs. All testing requirements and quality assurance provisions herein shall be satisfied by the
manufacturer prior to delivery.
3.11.1 Conditions of the supplied devices. Devices will be supplied in an unprogrammed or clear state. No provision will be
made for supplying programmed devices.
3.11.2 Erasure of EEPROMs. When specified, devices shall be erased in accordance with procedures and characteristics
specified in 4.5.1.
3.11.3 Programming of EEPROMs. When specified, devices shall be programmed in accordance with procedures and
characteristics specified in 4.5.2.
3.11.4 Verification of state of EEPROMs. When specified, devices shall be verified as either written to the specified pattern
or cleared. As a minimum, verification shall consist of performing a read of the entire array to verify that all bits are in the proper
state. Any bit that does not verify to be in the proper state shall constitute a device failure and the device shall be removed from
the lot or sample.
3.11.5 Power supply sequence of EEPROMs. In order to reduce the probability of inadvertant writes, the following power
supply sequences shall be observed.
a. For device types 1-19, a logic high state shall be applied to W E and/or CE at the same time or before the application
of VCC. For device types 16-19, an additional precaution is available, a logic low state shall be applied to RE S at the
same time or before the application of VCC.
b. For device types 1-19, a logic high state shall be applied to W E and/or CE at the same time or before the removal of
VCC. For device types 16-19, an additional precaution is available, a logic low state shall be applied to RE S at the
same time or before the removal of VCC.
3.12 Endurance. A reprogrammability test shall be completed as part of the vendor's reliability monitors. This
reprogrammability test shall be done for initial characterization and after any design or process changes which may affect the
reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of
program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendor's procedure
shall be kept under document control and shall be made available upon request of the acquiring or preparing activity, along with
test data.
3.13 Data retention. A data retention stress test shall be completed as part of the vendor's reliability monitors. This test shall
be done for initial characterization and after any design or process change which may affect data retention. The methods and
procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military
temperature range. The vendor's procedure shall be kept under document control and shall be made available upon request
of the acquiring or preparing activity, along with test data.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
A
REVISION LEVEL
G
5962-38267
SHEET
6