69F1608
128 Megabit (16M x 8-Bit)
Flash Memory Module
Logic Diagram (1 of 4 Die)
Memory
F
EATURES
:
• Single 5.0 V supply
D
ESCRIPTION
:
Maxwell Technologies’ 69F1608 high-performance flash mem-
ory is a 16M x 8-bit NAND Flash Memory with a spare 128K
(131,072) x 8-bit. A program operation programs the 528-byte
page in 250 µ s and an erase operation can be performed in 2
ms on an 8K-byte block. Data within a page can be read out at
50 ns cycle time per byte. The on-chip write controller auto-
mates all program and erase functions, including pulse repeti-
tion, where required, and internal verify and margining of data.
Even write-intensive systems can take advantage of the
69F1608’s extended reliability of 1,000,000 program/erase
cycles by providing either ECC (Error Correction Code) or real
time mapping-out algorithm. These algorithms have been
implemented in many mass storage applications. The spare
16 bytes of a page combined with the other 512 bytes can be
utilized by system-level ECC. The 69F1608 is an optimum
solution for large non-volatile storage applications such as
solid state data storage, digital voice recorders, digital still
cameras and other applications requiring nonvolatility.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. Capable of surviving in space environments, the
69F1608 is ideal for satellite, spacecraft, and space probe
missions. It is available with packaging and screening up to
Maxwell Technologies self-defined Class K.
•
Organization:
- Memory cell array: (4M + 128k) bit x 8bit
- Data register: (512 + 16) bit x 8bit
-
Contains 4 (32 Megabit) Die
Automatic program and erase
- Page program: (512 + 16) Byte
- Block erase: (8K + 256) Byte
- Status register
528-Byte page read operation
- Random access: 10 µ s (max)
- Serial page access: 50 ns (min)
Fast write cycle time
- Program time: 250 µ s (typ)
- Block erase time: 2 ms (typ)
Command/address/data multiplexed I/O port
Hardware data protection
- Program/erase lockout during power transitions
Reliable CMOS floating-gate technology
- Endurance: 1,000,000 program/erase cycles
- Data retention: 10 years
Command register operation
•
•
•
•
•
•
•
01.07.05 REV 2
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
