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72SD3232BRPFE 参数 Datasheet PDF下载

72SD3232BRPFE图片预览
型号: 72SD3232BRPFE
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位SDRAM [1 Gbit SDRAM]
分类和应用: 动态存储器
文件页数/大小: 41 页 / 601 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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1 Gbit(8-Meg X 32-Bit X 4-Banks) SDRAM
72SD3232B
T
ABLE
1. A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power Dissipation
Operating Temperature
Storage Temperature
S
YMBOL
V
IN
V
OUT
V
CC
I
OUT
P
D
T
OPR
T
STG
M
AX
-0.5 to VCC + 0.5
(< 4.6(max))
-0.5 to +4.6
50
1.0
-55 to +125
-65 to +150
U
NIT
V
V
mA
W
°C
°C
T
ABLE
2. R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
CC
Memory
P
ARAMETER
Supply Voltage
S
YMBOL
M
IN
M
AX
1,2
V
CC
, V
CCQ
3.0
3.6
3
V
SS
, V
SSQ
0
0
1,4
Input High Voltage
V
IH
2.0
V
CC
+ 0.3
1,5
Input Low Voltage
V
IL
-0.3
.8
1. All voltage referred to VSS
2. The supply voltage with all
V
CC
and V
CCQ
pins must be on the same level
3. The supply voltage with all V
SS
and V
SSQ
pins must be on the same level
4.
5.
V
IH
(max) =
V
CC
+2.0V for pulse width
<3ns
at
V
CC
V
IL
(min) =
V
SS
-2.0V for pulse width
<3ns
at
V
SS
U
NIT
V
V
V
V
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC1
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
1.
±10% of value specified in Table 4
D
ESCRIPTION
Operating Current
Standby Current in Power Down
Active Standby Current
V
ARIATION1
+ 10%
+ 10%
+ 10%
T
ABLE
4. DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Operating Current
1,2,3
S
YMBOL
I
CC1
T
EST
C
ONDITIONS
Burst length CAS Latency = 2
=1
CAS Latency = 3
t
RC
= min
CKE = V
IL
t
CK
= 12 ns
06.11.08 Rev 1
S
UBGROUPS
1, 2, 3
M
IN
M
AX
460
460
U
NITS
mA
Standby Current in Power Down
4
I
CC2P
1, 2, 3
12
mA
All data sheets are subject to change without notice
3
©2008 Maxwell Technologies
All rights reserved.