4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
F
IGURE
7. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(1) (
IN PROTECTION MODE
)
F
IGURE
8. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(2) (
IN NON
-
PROTECTION MODE
)
Memory
Toggle Bit Waveform
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30 µ s. In case CE and WE are kept high for 100 µ s after data input, the EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
10.13.04 Rev 15
All data sheets are subject to change without notice
12
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
