4 Megabit (512k x 8-bit) EEPROM MCM
1. I
LI
on RES = 100 uA max.
2. Only one CE\ Active.
79C0408
T
ABLE
7. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATIONS1
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Chip Enable Access Time OE = V
IL
, WE = V
IH
-120
-150
-200
Output Enable Access Time CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay CE = OE = V
IL
, WE = V
IH 3
-120
-150
-200
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
--
t
CE
9, 10, 11
--
--
--
t
OE
9, 10, 11
0
0
0
t
OH
9, 10, 11
0
0
0
t
DF
9, 10, 11
0
0
0
t
DFR
9, 10, 11
0
0
0
t
RR
9, 10, 11
--
--
--
400
450
650
300
350
450
ns
50
50
60
--
--
--
ns
75
75
125
ns
120
150
200
ns
120
150
200
ns
M
IN
M
AX
U
NIT
ns
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2.
t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
10.13.04 Rev 15
All data sheets are subject to change without notice
4
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
