8 Megabit (256K x 32-Bit) EEPROM MCM
T
ABLE
5. 79C0832 C
APACITANCE
(T
A
= 25
°
C, f = 1 MHz)
P
ARAMETER
Input Capacitance : V
IN
= 0V
1
S
YMBOL
C
IN
OE
C
IN
WE
C
IN
CE
0-1
C
IN
A0-A16
C
IN
RES
Output Capacitance: V
OUT
= 0V
1
C
Out
RDY/BSY
C
O ut
D0-D31
1. Guaranteed by design.
--
M
IN
79C0832
M
AX
6
6
6
6
48
6
12
pF
U
NIT
pF
T
ABLE
6. 79C0832 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Input Leakage Current
1
A0-A16, CE,WE, OE
Input Leakage Current
D0-D31
Standby V
CC
Current
1
T
EST
C
ONDITION
V
IN
= V
CC
V
IN
= 0V
V
IN
=V
CC
I
LI
I
LO
I
CC1A
I
CC1B
I
CC1C
I
CC1D
I
CC2A
1, 2, 3
--
--
1, 2, 3
1, 2, 3
1, 2, 3
--
--
S
YMBOL
I
LI
S
UBGROUPS
1, 2, 3
M
IN
--
M
AX
10
2
1.1
2
4
4
80
4
45
25
60
U
NITS
Memory
µA
mA
µA
µA
µA
mA
mA
mA
mA
Output Leakage Current (V
CC
= 5.5V, V
OUT
= 5.5V/0.4V)
CE = ADDR=WE=OE =V
CC
CE = V
IH;
ADDR=WE=OE =V
CC
CE = ADDR=WE=OE =V
IH
CE =V
IH
, ADDR=WE=OE =0V
Operating
V
CC
Current
1,3
OE = 0V ADDR=WE=V
CC
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 1 us at V
CC
= 5.5V
OE =ADDR=WE=0V
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 1 us at V
CC
= 5.5V
OE = 0V ADDR=WE=V
CC
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 150 ns at V
CC
= 5.5V
OE =ADDR=WE=0V
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 150 ns at V
CC
= 5.5V
Input Voltage
I
CC2B
1, 2, 3
--
85
mA
I
CC2C
1, 2, 3
--
200
mA
I
CC2D
1, 2, 3
225
mA
V
IL
V
IH
RES_PIN
V
H
1, 2, 3
2.2
V
CC
-0.5
0.8
V
02.14.06 REV 15
All data sheets are subject to change without notice
4
©2006 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
