8 Megabit (256K x 32-Bit) EEPROM MCM
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Data Latch Time
-150
-200
Byte Load Window
-150
-200
Byte Load Cycle
-150
-200
Time to Device Busy
-150
-200
Write Start Time
3
-150
-200
RES to Write Setup Time
4
-150
-200
V
CC
to RES Setup Time
4
-150
-200
1. Use this device in a longer cycle than this value.
S
YMBOL
t
DL
S
UBGROUPS
9, 10, 11
300
400
t
BL
9, 10, 11
100
200
t
BLC
9, 10, 11
.55
.95
t
DB
9, 10, 11
120
170
t
DW
9, 10, 11
150
250
t
RP
9, 10, 11
100
200
t
RES
9, 10, 11
1
3
M
IN 1
79C0832
M
AX
--
--
µs
--
--
µs
30
30
ns
--
--
ns
--
--
µs
--
--
µs
--
--
U
NITS
ns
T
ABLE
8. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
Memory
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
T
ABLE
9. 79C0832 M
ODE
S
ELECTION 1
P
ARAMETER
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
CE
2
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out (I/O7)
High-Z
RES
V
H
X
V
H
V
H
X
X
V
H
V
L
RDY/BUSY
V
OH
V
OH
V
OH
--> V
OL
V
OH
--
--
V
OL
V
OH
Program Reset
X
X
1. Refer to the recommended DC operating conditions.
2. For CE
0-1
only one CE can be used (“on”) at a time.
02.14.06 REV 15
All data sheets are subject to change without notice
7
©2006 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
