8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
F
IGURE
7. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(1) (
IN PROTECTION MODE
)
F
IGURE
8. S
OFTWARE
D
ATA
P
ROTECTION
W
AVEFORM
(2) (
IN NON
-
PROTECTION MODE
)
Memory
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading
the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept high
for 100µ s after data input, the EEPROM enters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
02.14.06 REV 15
All data sheets are subject to change without notice
11
©2006 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
