Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNIT
MIN
Byte Load Cycle
tBLC
9, 10, 11
µs
-200
-250
1
1
--
--
Time to Device Busy
-200
-250
tDB
tDW
tRP
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
µs
µs
150
150
--
--
Write Start Time3
-200
-250
150
150
--
--
RES to Write Setup Time
-200
-250
100
100
--
--
V to RES Setup Time4
tRES
CC
-200
-250
1
1
--
--
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1, 2
TABLE 9. 79LV0408 MODE SELECTION
CE 3
PARAMETER
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
High-Z
High-Z
IL
IL
IH
H
Standby
Write
V
X
X
High-Z
X
IH
V
V
V
D
V
High-Z --> V
OL
IL
IH
IL
IN
H
Deselect
Write Inhibit
V
V
V
High-Z
V
High-Z
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
Data Out (I/O7)
High-Z
V
V
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
01.11.05 Rev 7
All data sheets are subject to change without notice
6
©2005 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
