Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS
PAGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Data Latch Time
tDL
9, 10, 11
ns
-200
-250
700
750
--
--
Byte Load Window
-200
-250
tBL
tBLC
tDB
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
µs
µs
ns
ns
µs
µs
100
200
--
--
Byte Load Cycle
-200
-250
1
1
30
30
Time to Device Busy
-200
-250
100
120
--
--
Write Start Time 3
-200
-250
tDW
250
250
--
--
RES to Write Setup Time4
-200
-250
tRP
100
100
--
--
V
CC to RES Setup Time4
tRES
-200
-250
1
1
--
--
1. Use this device in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by desgin.
All data sheets are subject to change without notice
01.10.05 Rev 8
7
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
