欢迎访问ic37.com |
会员登录 免费注册
发布采购

89LV1632RPQI-30 参数 Datasheet PDF下载

89LV1632RPQI-30图片预览
型号: 89LV1632RPQI-30
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 512K ×32位)低电压SRAM MCM [16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 12 页 / 199 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
 浏览型号89LV1632RPQI-30的Datasheet PDF文件第2页浏览型号89LV1632RPQI-30的Datasheet PDF文件第3页浏览型号89LV1632RPQI-30的Datasheet PDF文件第4页浏览型号89LV1632RPQI-30的Datasheet PDF文件第5页浏览型号89LV1632RPQI-30的Datasheet PDF文件第6页浏览型号89LV1632RPQI-30的Datasheet PDF文件第7页浏览型号89LV1632RPQI-30的Datasheet PDF文件第8页浏览型号89LV1632RPQI-30的Datasheet PDF文件第9页  
89LV1632
16 Megabit (512K x 32-Bit)
Low Voltage MCM SRAM
16 Megabit (512k x 32-bit) SRAM MCM
CS 1-4
Address
OE, WE
89LV1632
Power
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Ground
MCM
Memory
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Logic Diagram
F
EATURES
:
• Four 512k x 8 SRAM die
• R
AD
-P
AK
® technology hardens against natural space radia-
tion technology
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 101MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 8E-9 cm
2
/bit
• Package: 68-pin quad flat package
• Completely static memory - no clock or timing strobe
required
• Internal bypass capacitor
• High-speed silicon-gate CMOS technology
• 3.3 V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static Random Access Memory
features a greater than 100 krad(Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramic package. With high-perfor-
mance silicon-gate CMOS technology, the 89LV1632 reduces
power consumption and eliminates the need for external
clocks or timing strobes. It is equipped with output enable
(OE) and four byte chip enable (CS1 - CS4) inputs to allow
greater system flexibility. When OE input is high, the output is
forced to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. In a GEO orbit, R
AD
-P
AK
® packaging provides greater
than 100 krad(Si) total radiation dose tolerance, dependent
upon space mission. It eliminates the need for box shielding
while providing the required radiation shielding for a lifetime in
orbit or a space mission. This product is available in with
screening up to Maxwell Technologies self-defined Class K.
08.18.05 Rev 3
All data sheets are subject to change without notice
1
(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies.
All rights reserved.