MCC
Features
•
•
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
2SC1623
High DC Current Gain: h
FE
=200 TYP.(V
CE
=6.0V, I
C
=1.0mA)
High voltage: V
CEO
=50V
NPN Silicon
Epitaxial Transistors
Unit
V
V
V
mA
mW
O
C
O
C
F
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
50
60
5.0
100
200
-55 to +150
-55 to +150
SOT-23
A
D
C
B
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector Cutoff Current
(V
CB
=60Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=1.0mAdc, V
CE
=6.0Vdc)
Collector Saturation Voltage*
(I
C
=100mAdc, I
B
=10mAdc)
Base Saturation Voltage*
(I
C
=100mAdc,I
B
=10mAdc)
Base Emitter Voltage*
(V
CE
=6.0Vdc, I
C
=1.0mAdc)
Collector Capacitance
(V
CB
=6.0Vdc, I
E
=0, f=1.0MHz)
Gain Bandwidth product
(V
CE
=6.0Vdc, I
E
=10mAdc)
Min
---
---
Typ
---
---
Max
0.1
0.1
Units
G
H
J
OFF CHARACTERISTICS
I
CBO
I
EBO
uAdc
K
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
F
V
CE(sat)
V
BE(SAT)
V
BE
C
ob
f
T
90
---
---
0.55
---
---
200
0.15
0.86
0.62
3.0
250
600
0.3
1.0
0.65
---
---
---
Vdc
Vdc
Vdc
pF
MHz
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
h
FE
CLASSIFICATION
Marking
L4
L5
h
FE
90-180
135-270
* Pulse Test PW<350us, duty cycle<2%
L6
200-400
L7
300-600
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30
MCC [ Micro Commercial Components ]
