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BC807-40W 参数 Datasheet PDF下载

BC807-40W图片预览
型号: BC807-40W
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅通用晶体管 [PNP Silicon General Purpose Transistors]
分类和应用: 晶体晶体管开关光电二极管IOT
文件页数/大小: 4 页 / 274 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号BC807-40W的Datasheet PDF文件第2页浏览型号BC807-40W的Datasheet PDF文件第3页浏览型号BC807-40W的Datasheet PDF文件第4页  
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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BC807-16W
BC807-25W
BC807-40W
PNP Silicon
General Purpose
Transistors
SOT-323
A
D
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 0.2Watts of Power Dissipation.
Collector-current 0.5A
Operating and storage junction temperature range: -55
O
C to +150
O
C
Mechanical Data
Case: SOT-323 Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.005 grams (approx.)
Device Marking:
BC807-16W
5A
BC807-25W
5B
BC807-40W
5C
F
C
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=1.0uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=20Vdc,I
E
=0)
Collector Cutoff Current
(V
CE
=20V dc,I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
BC807-16W
BC807-25W
BC807-40W
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Voltage
(I
C
=500mAdc,V
CE
=1Vdc)
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
Collector output capacitance
(V
CB
=10V, f=1MHz)
Min
45
50
5.0
---
---
---
Max
---
---
---
0.1
0.2
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
E
B
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
G
H
J
K
DIMENSIONS
ON CHARACTERISTICS
h
FE(1)
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
NOTE
h
FE(2)
V
CE(sat)
V
BE(on)
100
160
250
40
---
---
250
400
600
---
0.7
1.2
---
---
---
---
0.90
0.70
Vdc
1.90
MM
Vdc
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
80
---
10
MHz
pF
0.65
0.65
www.mccsemi.com
Revision: A
1 of
4
2011/01/01