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BC848B 参数 Datasheet PDF下载

BC848B图片预览
型号: BC848B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小信号晶体管310MW [NPN Small Signal Transistor 310mW]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 107 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号BC848B的Datasheet PDF文件第1页  
M C C  
BC846A thru BC848C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage (Note 3)  
BC846  
BC847  
BC848  
80  
50  
30  
V(BR)CBO  
IC = 10mA, IB = 0  
V
Collector-Emitter Breakdown Voltage (Note 3) BC846  
BC847  
BC848  
65  
45  
30  
IC = 10mA, IB = 0  
V(BR)CEO  
V
V
Emitter-Base Breakdown Voltage (Note 3)  
H-Parameters  
BC846  
BC847  
BC848  
6
5
V(BR)EBO  
IE = 1mA, IC = 0  
hfe  
hfe  
hfe  
hie  
hie  
hie  
hoe  
hoe  
hoe  
hre  
hre  
hre  
Small Signal Current Gain  
Current Gain Group A  
220  
330  
600  
2.7  
4.5  
8.7  
18  
30  
kW  
kW  
kW  
µS  
µS  
µS  
B
C
Input Impedance  
Current Gain Group A  
B
C
Current Gain Group A  
VCE = 5.0V, IC = 2.0mA,  
f = 1.0kHz  
Output Admittance  
B
C
A
B
C
60  
1.5x10-4  
2x10-4  
3x10-4  
Reverse Voltage Transfer Ratio  
Current Gain Group  
DC Current Gain  
Current Gain Group A  
B
110  
200  
420  
180  
290  
520  
220  
450  
800  
VCE = 5.0V, IC = 2.0mA  
(Note 3)  
C
RqS  
°C/W  
°C/W  
Thermal Resistance, Junction to Substrate Backside  
Thermal Resistance, Junction to Ambient Air  
Collector-Emitter Saturation Voltage (Note 3)  
Note 1  
320  
400  
RqJA  
Note 1  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
90  
200  
250  
600  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
mV  
mV  
mV  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
700  
900  
Base-Emitter Saturation Voltage (Note 3)  
Base-Emitter Voltage (Note 3)  
VCE = 5.0V, IC = 2.0mA  
VCE = 5.0V, IC = 10mA  
580  
660  
700  
770  
VCE = 80V  
ICES  
ICES  
ICES  
ICBO  
ICBO  
Collector-Cutoff Current (Note 3)  
BC846  
BC847  
BC848  
15  
15  
15  
15  
5.0  
nA  
nA  
nA  
nA  
µA  
V
V
V
V
CE = 50V  
CE = 30V  
CB = 40V  
CB = 30V, TA = 150°C  
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
fT  
Gain Bandwidth Product  
100  
300  
3.0  
MHz  
pF  
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
VCE = 5V, IC = 200µA,  
RS = 2.0kW,  
f = 1.0kHz, Df = 200Hz  
Noise Figure  
NF  
2
10  
dB  
Notes:  
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.  
2. Current gain subgroup “C” is not available for BC846.  
3. Short duration pulse test to minimize self-heating effect.  
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