欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC856BW 参数 Datasheet PDF下载

BC856BW图片预览
型号: BC856BW
PDF下载: 下载PDF文件 查看货源
内容描述: PNP通用晶体管 [PNP General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 464 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号BC856BW的Datasheet PDF文件第2页浏览型号BC856BW的Datasheet PDF文件第3页浏览型号BC856BW的Datasheet PDF文件第4页浏览型号BC856BW的Datasheet PDF文件第5页  
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$%    !"#
BC856AW/BW
BC857AW/BW/CW
BC858AW/BW/CW
PNP
General Purpose
Transistors
SOT-323
A
D
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Ideally Suited for Automatic Insertion
Complementary PNP Silicon Types Available
For Switching and AF Amplifier Applications
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Operating temperature : -65 to +150
Storage temperature : -65 to +150
Marking: BC856AW---3A ; BC856BW---3B
BC857AW---3E ; BC857BW---3F ; BC857CW---3G
BC858AW---3J ; BC858BW---3K ; BC858CW---3L
C
C
B
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
Collector-Emitter Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cut-off Current (V
CB
=30v)
(V
CB
=30v,T
A
=150 )
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC856AW,BC857AW,BC858AW
BC856BW,BC857BW,BC858CW
BC857CW,BC858CW
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(VCE=5V,
I
C
=10mA, f=100MHz)
Noise Figure
(V
CE
=5v,Ic=200uA,Rs=2kohm,f=1kHz)
Collector-Base Capacitance
(V
CB
=10v,f=1.0kHz)
Power Dissipation
Thermal Resistance,Juncition to
Ambient
Collector Current - Continuous
G
H
J
---
---
---
80
50
30
Vdc
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
V
(BR)CEO
---
---
---
---
---
125
220
420
---
---
100
---
---
---
---
---
65
45
30
5
15
4
250
475
800
0.65
1.10
200
10
4.5
150
625
100
Vdc
V
(BR)EBO
I
CBO
H
FE(1)
Vdc
nAdc
uAdc
---
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
V
CE(sat)
V
BE(sat)
f
T
NF
C
CBO
Pd
R
JA
Ic
Suggested Solder
Pad Layout
0.70
Vdc
Vdc
0.90
MHz
1.90
dB
pF
mW
/W
mA
0.65
0.65
inches
mm
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision: A
www.mccsemi.com
1 of 5
2011/01/01