MCC
Micro Commercial Components
TM
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
BCX55
BCX55-10
BCX55-16
NPN
Plastic-Encapsulate
Transistors
C
•
x
x
x
x
•
•
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power Dissipation: P
CM
=0.5W (T
amb
=25 )
Collector Current: I
CM
=1.0A
Collector-Base Voltage: V
(BR)CBO
=60V
Marking : BCX55=BE, BCX55-10=BG, BCX55-16=BM
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Rating
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current DC
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=10mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=10uA, I
C
=0)
Collector Cutoff Current
(V
CB
=30V, I
E
=0)
Emitter Cutoff Current
(V
EB
=5.0V, I
C
=0)
DC Current Gain
(V
CE
=2.0V, I
C
=150mA)
BCX55
BCX55-10
BCX55-16
DC Current Gain
(V
CE
=2.0V, I
C
=5.0mA)
DC Current Gain
(V
CE
=2.0V, I
C
=500mA)
Collector-Emitter Saturation Voltage
(I
C
=500mA,I
B
=50mA)
Base-Emitter Voltage
(I
C
=500mA, V
CE
=2.0V)
Transition Frequency
(V
CE
=10V, I
C
=50mA,
f=100MHz)
Min
Value
60
60
5
1.0
0.5
-55 to +150
-55 to +150
Typ
Max
Unit
V
V
V
A
W
O
C
O
C
Units
Maximum Ratings
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
T
STG
Symbol
Electrical Characteristics @ 25qC Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
60
60
5
---
---
---
---
---
---
---
---
---
---
0.1
0.1
V
V
V
uA
uA
D
G
1
SOT-89
A
B
K
E
H
J
F
2
3
1:Base
2:Collector
3:Emitter
63
63
100
40
25
---
---
130
---
---
---
250
160
250
---
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(on)
f
T
1.55
.061
25
REF.
---
---
---
0.5
1
---
V
V
MHz
www.mccsemi.com
Revision:
A
1
of
3
2011/01/01