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MMBD4148SE 参数 Datasheet PDF下载

MMBD4148SE图片预览
型号: MMBD4148SE
PDF下载: 下载PDF文件 查看货源
内容描述: 高电导率的超快速二极管为350mW [High Conductance Ultra Fast Diode 350mW]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 158 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号MMBD4148SE的Datasheet PDF文件第2页  
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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MMBD4148SE
High Conductance
Ultra Fast Diode
350mW
SOT-23
A
D
Features
Surface Mount Package Ideally Suited for Automatic Insertion
150
o
C Junction Temperature
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Mechanical
Data
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking: D4
Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Working Inverse Voltage
DC Forward Current
Average Rectified Current
Recurrent Peak Forward Current
Peak Forward Surge Current@ t=1.0s
@ t=1.0us
Power Dissipation
Thermal Resistance
Operation & Storage Temp. Range
Symbol
V
IV
I
F M
I
F(AV)
I
FRM
I
FSM
P
d
R
Tj, T
STG
Value
75
600
200
700
1.0
2.0
350
357
-55 to +150
o
Unit
V
mA
mA
mA
G
F
E
C
B
H
J
A
K
mW
C/W
o
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
C
Note:
1)
These ratings are based on a max. junction temperature of 150 degrees C
2)
These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operation
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Breakdown Voltage
Maximum
Instantaneous
Forward Voltage
Maximum
Instantaneous Reverse
Current
Junction Capacitance
Reverse Recovery
Time
Symbol
V
R
V
F
Min
75
1.0
25
50
5.0
4
4
Max
Unit
V
V
Test Cond.
I
R
=5uA
I
F
=10mA
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
I
R
C
j
t
rr
nA V
R
=20V
uA V
R
=20V T
A
=150
o
C
uA V
R
=75V
pF V
R
=0V, f=1.0MHz
I
F
=10mA, V
R
=6.0V,
ns I
RR
=1.0mA,
R
L
=100 OHM
.037
.950
.037
.950
Revision:
A
www.mccsemi.com
1 of 2
2011/01/01