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MMBD914 参数 Datasheet PDF下载

MMBD914图片预览
型号: MMBD914
PDF下载: 下载PDF文件 查看货源
内容描述: 350mW的100伏硅外延二极管 [350mW 100 Volt Silicon Epitaxial Diode]
分类和应用: 二极管光电二极管PC
文件页数/大小: 2 页 / 83 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号MMBD914的Datasheet PDF文件第2页  
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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MMBD914
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
C
Pin Configuration
Top View
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
A
D
5D
A
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
F
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
75V
100V
150mA
350mW
175°C
1.0A
t=1s,Non-Repetitive
Resistive Load
f > 50Hz
G
H
J
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
V
F
.855V
I
FM
= 10mA;
T
J
= 25°C*
T
J
= 25°C
V
R
=20Volts
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
I
R
25nA
Measured at
1.0MHz, V
R
=0V
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
J
2pF
.037
.950
.037
.950
www.mccsemi.com