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MMBT5551 参数 Datasheet PDF下载

MMBT5551图片预览
型号: MMBT5551
PDF下载: 下载PDF文件 查看货源
内容描述: PNP塑料封装晶体管 [PNP Plastic Encapsulate Transistor]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 2 页 / 64 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号MMBT5551的Datasheet PDF文件第2页  
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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MMBT5551
Features
Collector Current: I
CM
=0.6A
Collector-Base Voltage: V
(BR)CBO
=180V
Operating And Storage Temperatures –55
O
C to 150
O
C
Capable of 0.3Watts of Power Dissipation
Marking: G1
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
NPN Plastic
Encapsulate
Transistor
SOT-23
A
D
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector -Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=120Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(V
CE
=5.0Vdc, I
C
=1.0mAdc)
DC Current Gain
(V
CE
=5.0Vdc, I
C
=10mAdc)
DC Current Gain
(V
CE
=5.0Vdc, I
C
=50mAdc)
Collector-Emitter Saturation Voltage
(I
C
=50mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=50mAdc,I
B
=5.0mAdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=30MHz)
Min
160
180
6.0
---
---
Max
---
---
---
0.1
0.1
Units
O
C
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Vdc
F
E
C
B
E
Vdc
Vdc
G
H
J
uAdc
K
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE-1
h
FE-2
h
FE-3
V
CE(sat)
V
BE(sat)
80
100
50
---
200
---
---
---
---
---
---
0.5
1.0
Vdc
Vdc
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
SMALL-SIGNAL CHARACTERISTICS
f
T
100
---
MHz
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision: 4
1 of 2
2008/01/01