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MMBTA06 参数 Datasheet PDF下载

MMBTA06图片预览
型号: MMBTA06
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小信号通用放大器晶体管 [NPN Small Signal General Purpose Amplifier Transistors]
分类和应用: 晶体放大器小信号双极晶体管光电二极管
文件页数/大小: 4 页 / 653 K
品牌: MCC [ Micro Commercial Components ]
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Micro Commercial Components
MCC
TM
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$%    !"#
MMBTA05
THRU
MMBTA06
NPN Small Signal
General Purpose
Amplifier Transistors
SOT-23
A
D
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA55/MMBTA56)
Ideal for Medium Power Amplification and Switching.
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V
CEO
Marking:
MMBTA05:1H/K1H
MMBTA06:1GM/K1G
Rating
Unit
V
CBO
Electrical Characteristics @ 25
OFF CHARACTERISTICS
V
(BR)CEO
Symbol
Parameter
V
EBO
I
C
P
D
R
θJA
T
J
T
STG
Rating
Collector-Emitter Voltage
MMBTA05
MMBTA06
Collector-Base Voltage
MMBTA05
MMBTA06
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation*
Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Storage Temperature
C
60
80
V
C
B
60
80
4.0
500
300
357
-55 to +150
-55 to +150
V
V
mA
mW
K/W
G
F
E
B
E
H
J
Unless Otherwise Specified
Min
Max
Units
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.098
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
V
(BR)EBO
I
CBO
I
CES
ON CHARACTERISTICS
h
FE
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
MMBTA05
MMBTA06
Emitter-Base Breakdown Voltage
(I
E
=100µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0) MMBTA05
(V
CB
=80Vdc, I
E
=0) MMBTA06
Emitter Cutoff Current
(V
CE
=60Vdc, I
B
=0) MMBTA05
(V
CE
=80Vdc, I
B
=0) MMBTA06
60
80
---
---
Vdc
4.0
---
Vdc
---
---
0.1
0.1
µAdc
µAdc
---
---
0.1
0.1
µAdc
µAdc
.035
.900
Suggested Solder
Pad Layout
.031
.800
V
CE(sat)
V
BE(on)
f
T
DC Current Gain
(V
CE
=1.0Vdc, I
C
=10mAdc)
(V
CE
=1.0Vdc, I
C
=100mAdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter On Voltage
(I
C
=100mAdc, IB=10mAdc)
Current-Gain—Bandwidth Product
(I
C
=10mAdc, V
CE
=2.0Vdc, f=100MHz)
100
100
---
---
.079
2.000
inches
mm
---
0.25
Vdc
---
1.2
Vdc
100
---
MHz
.037
.950
* Valid provided that terminals are kept at ambient temperature..
.037
.950
www.mccsemi.com
Revision: A
1
of
4
2011/01/01