MCC
Features
•
•
•
•
omponents
21201 Itasca Street Chatsworth
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MPSA13
MPSA14
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Darlington Transistor
TO-92
A
E
Pin Configuration
Bottom View
C
B
E
Maximum Ratings
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=100uAdc, I
B
=0)
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
DC Current Gain
(I
C
=10mAdc, V
CE
=5.0Vdc)
Rating
30
30
10
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Min
30
100
100
Max
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Units
Vdc
nAdc
nAdc
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
D
ON CHARACTERISTICS
(1)
h
FE(1)
MPSA13
MPSA14
5000
10000
10000
20000
1.5
2.0
Vdc
Vdc
G
DIMENSIONS
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
h
FE(2)
V
CE(sat)
V
BE(on)
DC Current Gain
(I
C
=100mAdc, V
CE
=5.0Vdc) MPSA 13
MPSA14
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=5.0Vdc)
DIM
A
B
C
D
E
G
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
1.
Current-Gain – Bandwidth Product
(2)
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
f
T
=|h
fe
| x f
test
125
MHz
2.
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MCC [ Micro Commercial Components ]
