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MPSA13 参数 Datasheet PDF下载

MPSA13图片预览
型号: MPSA13
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅达林顿晶体管 [NPN Silicon Darlington Transistor]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 5 页 / 304 K
品牌: MCC [ Micro Commercial Components ]
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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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MPSA13
MPSA14
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
NPN Silicon
Darlington Transistor
TO-92
A
E
Marking:MPSA13--MPSA13,MPSA14--MPSA14.
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=100uAdc, I
B
=0)
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
DC Current Gain
(I
C
=10mAdc, V
CE
=5.0Vdc)
Rating
30
30
10
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Min
30
100
100
Max
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Units
Vdc
nAdc
nAdc
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
D
ON CHARACTERISTICS
(1)
h
FE(1)
G
MPSA13
MPSA14
5000
10000
10000
20000
1.5
2.0
Vdc
Vdc
DIM
A
B
C
D
E
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.096
MM
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
E
B
C
h
FE(2)
V
CE(sat)
V
BE(on)
DC Current Gain
(I
C
=100mAdc, V
CE
=5.0Vdc) MPSA13
MPSA14
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
1.
Current-Gain – Bandwidth Product
(2)
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
f
T
=|h
fe
| x f
test
125
MHz
2.
www.mccsemi.com
Revision:
A
1 of 5
2011/01/01