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MX25L802MC-50 参数 Datasheet PDF下载

MX25L802MC-50图片预览
型号: MX25L802MC-50
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ 8M ​​×1 ] CMOS串行EEPROM FLASH [8M-BIT [8M x 1] CMOS SERIAL FLASH EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 282 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX25L802
8M-BIT [8M x 1] CMOS SERIAL FLASH EEPROM
FEATURES
GENERAL
8,388,608 x 1 bit structure
128 Equal Sectors with 8K-byte each
-
Any sector can be erased
2048 Equal Segments with 512-byte each
-
Provides sequential output within any segment
Single Power Supply Operation
-
3.0 to 3.6 volt for read, erase, and program operations
Latch-up protected to 100mA from -1V to Vcc +1V
Low Vcc write inhibit is equal to or less than 2.5V
PERFORMANCE
High Performance
SOFTWARE FEATURES
• Input Data Format
-
1-byte Command code, 3-byte address, 1-byte byte
address
• 512-byte Sequential Read Operation
• Built in 9-bit (A0 to A8) pre-settable address counter
to support the 512-byte sequential read operation
• Auto Erase and Auto Program Algorithm
-
Automatically erases and verifies data at selected
sector
-
Automatically programs and verifies data at selected
page by an internal algroithm that automatically times
the program pulse widths (Any page to be programed
should have page in the erased state first)
Status Register Feature
-
Provides detection of program and erase operation
completion.
-
Provides auto erase/ program error report
HARDWARE FEATURES
SCLK Input
-
Serial clock input
• SI Input
-
Fast access time: 20MHz serial clock (50pF + 1TTL
Load)
-
Fast program time: 5ms/page (typical, 128-byte per
page)
-
Fast erase time: 300ms/sector (typical, 8K-byte per
sector)
Low Power Consumption
-
Low active read current: 10mA (typical) at 17MHz
-
Low active programming current: 10mA (typical)
-
Low active erase current: 10mA (typical)
-
Low standby current: 30uA (typical, CMOS)
Minimum 100,000 erase/program cycle
-
Serial Data Input
• SO Output
-
Serial Data Output
• PACKAGE
-
28-pin SOP (330mil)
P/N: PM0837
REV. 1.1, APR. 13, 2005
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