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MX25L8005MI-12G 参数 Datasheet PDF下载

MX25L8005MI-12G图片预览
型号: MX25L8005MI-12G
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ ×1 ] CMOS串行闪存 [8M-BIT [x 1] CMOS SERIAL FLASH]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 44 页 / 829 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L8005  
Note: If SRWD bit=1 but WP# is low, it is impossible to write the Status Register even if the WEL bit has previously been  
set. It is rejected to write the Status Register and not be executed.  
HardwareProtectedMode(HPM):  
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When SRWD bit=1, and then WP# is low (or WP# is low before SRWD bit=1), it enters the hardware protected mode  
(HPM). The data of the protected area is protected by software protected mode by BP2, BP1, BP0 and hardware  
protected mode by the WP# to against data modification.  
Note:toexitthehardwareprotectedmoderequiresWP#drivinghighoncethehardwareprotectedmodeisentered.Ifthe  
WP# pin is permanently connected to high, the hardware protected mode can never be entered; only can use software  
protected mode via BP2, BP1, BP0.  
(6) Read Data Bytes (READ)  
Thereadinstructionisforreadingdataout.TheaddressislatchedonrisingedgeofSCLK,anddatashiftsoutonthefalling  
edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically  
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single  
READ instruction. The address counter rolls over to 0 when the highest address has been reached.  
The sequence of issuing READ instruction is: CS# goes low-> sending READ instruction code-> 3-byte address on SI  
-> data out on SO-> to end READ operation can use CS# to high at any time during data out. (see Figure. 16)  
(7) Read Data Bytes at Higher Speed (FAST_READ)  
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of  
each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at any location.  
Theaddressisautomaticallyincreasedtothenexthigheraddressaftereachbytedataisshiftedout,sothewholememory  
can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when the highest address has  
beenreached.  
The sequence of issuing FAST_READ instruction is: CS# goes low-> sending FAST_READ instruction code-> 3-byte  
address on SI-> 1-dummy byte address on SI->data out on SO-> to end FAST_READ operation can use CS# to high at  
any time during data out. (see Figure. 17)  
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact  
on the Program/Erase/Write Status Register current cycle.  
(8) Sector Erase (SE)  
TheSectorErase(SE)instructionisforerasingthedataofthechosensectortobe "1".AWriteEnable(WREN)instruction  
must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address of the sector  
(see table 3) is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the  
latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed.  
Address bits [Am-A12] (Am is the most significant address) select the sector address.  
The sequence of issuing SE instruction is: CS# goes low -> sending SE instruction code-> 3-byte address on SI -> CS#  
goes high. (see Figure 19)  
P/N:PM1237  
REV. 2.2, OCT. 23, 2008  
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