MX26LV008T/B
Macronix NBit
TM
Memory Family
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
3V ONLY HIGH SPEED eLiteFlash
TM
MEMORY
FEATURES
• Extended single - supply voltage range 3.0V to 3.6V
• 1,048,576 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte Programming (55us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV008T/B is a 8-mega bit Flash memory or-
ganized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX26LV008T/B
is packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX26LV008T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX26LV008T/B has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX26LV008T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 2,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX26LV008T/B uses a 3.0V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM1057
REV. 1.0, NOV. 08, 2004
1
MCNIX [ MACRONIX INTERNATIONAL ]
