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MX26LV400TTC-55 参数 Datasheet PDF下载

MX26LV400TTC-55图片预览
型号: MX26LV400TTC-55
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512Kx8 / 256Kx16 ] CMOS单电压3V只引导扇区高速eLiteFlashTM记忆 [4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY]
分类和应用:
文件页数/大小: 46 页 / 550 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX26LV400
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 5 defines the valid register command
sequences.
TABLE 5. MX26LV400 BUS OPERATION
ADDRESS
DESCRIPTION
CE#
OE#
WE# RESET# A17 A10 A9 A8 A6 A5 A1 A0
A12 A11
Read
L
L
H
H
A7
AIN
A2
Dout
Q0~Q7
Q8~Q15
BYTE
=VIH
Dout
BYTE
=VIL
Q8~Q14
=High Z
Q15=A-1
Write
Reset
Output Disable
Standby
L
X
L
Vcc±
0.3V
H
X
H
X
L
X
H
X
H
L
H
Vcc±
0.3V
AIN
X
X
X
DIN(3)
High Z
High Z
High Z
DIN
High Z
High Z
High Z
High Z
High Z
High Z
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11V to 12V.
3. Refer to Table 5 for valid Data-In during a write operation.
4. X can be VIL or VIH.
P/N:PM1094
REV. 1.0, NOV. 08, 2004
8