MX29F004T/B
4M-BIT [512KX8] CMOS FLASH MEMORY
FEATURES
• 524,288 x 8 only
• Single power supply operation
- 5.0V only operation for read, erase and program
operation
• Fast access time: 70/90/120ns
• Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase
(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors
with Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from,
or program data to, another sector that is not being
erased, then resumes the erase.
Status Reply
- Data polling & Toggle bit for detection of program
and erase cycle completion.
Chip protect/unprotect for 5V only system or 5V/
12V system.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Low VCC write inhibit is equal to or less than 3.2V
Package type:
- 32-pin PLCC, TSOP or PDIP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
20 years data retention
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GENERAL DESCRIPTION
The MX29F004T/B is a 4-mega bit Flash memory
organized as 512K bytes of 8 bits. MXIC's Flash
memories offer the most cost-effective and reliable read/
write non-volatile random access memory. The
MX29F004T/B is packaged in 32-pin PLCC, TSOP,
PDIP. It is designed to be reprogrammed and erased in
system or in standard EPROM programmers.
The standard MX29F004T/B offers access time as fast
as 70ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus
contention, the MX29F004T/B has separate chip enable
(CE) and output enable (OE ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F004T/B uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and programming mechanisms. In addition,
the combination of advanced tunnel oxide
processing and low internal electric fields for erase
and program operations produces reliable cycling.
The MX29F004T/B uses a 5.0V±10% VCC supply
to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to
100 milliamps on address and data pin from -1V to
VCC + 1V.
P/N:PM0554
REV. 1.4, JUN. 12, 2001
1
MCNIX [ MACRONIX INTERNATIONAL ]
