MX29F016
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• Single power supply 5V operation for read, erase and
program
• Fast access time: 90/120ns
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase:32 equal sector with of 64KByte each
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors
with Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from,
or program data to, another sector that is not being
erased, then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program
and erase cycle completion.
• Group Sector protect/unprotect for 5V/12V system.
• Group Sector protection
- Hardware sector protect/unprotect method for each
group which consists of two adjacent sectors
- Temporary group sector unprotect allows code
changes in previously locked sectors
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 40-pin TSOP, 44-pin SOP, 48-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29F016 is a 16-mega bit Flash memory organized
as 2M bytes of 8 bits. MXIC's Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX29F016 is packaged in
40-pin TSOP or 44-pin SOP, 48-pin TSOP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29F016 offers access time as fast as
90ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F016 has separate chip enable (CE) and output
enable (OE ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F016 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
The MX29F016 uses a 5.0V±10% VCC supply to
perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to
100 milliamps on address and data pin from -1V to
VCC + 1V.
P/N:PM0590
REV. 1.3, JUN. 13, 2001
1
MCNIX [ MACRONIX INTERNATIONAL ]
